document number: 84648 for technical questions within your region, please contact one of the following: www.vishay.com revision: 21-jul-09 pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com 1 surface mount ultrafast plastic rectifier esh3b, esh3c & esh3d vishay general semiconductor new product features ? glass passivated chip junction ? ideal for automated placement ? ultrafast recovery ti mes for high efficiency ? low forward voltage, low power loss ? high forward surge capability ? meets msl level 1, per j-std-020, lf maximum peak of 260 c ? aec-q101 qualified ? compliant to rohs directive 2002/95/ec and in accordance to weee 2002/96/ec ? find out more about vishay?s automotive grade product requirements at: www.vishay.com/applications typical applications for use in high frequency rectification and freewheeling application in switching mode converter and inverter for both consumer and automotive. mechanical data case: do-214ab (smc) molding compound meets ul 94 v-0 flammability rating base p/n-e3 - rohs compliant, commercial grade base p/nhe3 - rohs comp liant, automotive grade terminals: matte tin plated leads, solderable per j-std-002 and jesd 22-b102 e3 suffix meets jesd 201 clas s 1a whisker test, he3 suffix meets jesd 201 class 2 whisker test polarity: color band denotes cathode end primary characteristics i f(av) 3.0 a v rrm 100 v, 150 v, 200 v t rr 25 ns v f 0.90 v t j max. 175 c do-214ab (smc) maximum ratings (t a = 25 c unless otherwise noted) parameter symbol esh3b esh3c esh3d unit device marking code ehb ehc ehd maximum repetitive peak reverse voltage v rmm 100 150 200 v maximum rms voltage v rms 70 105 140 v maximum dc blocking voltage v dc 100 150 200 v maximum average forward rectified current (fig. 1) i f(av) 3.0 a peak forward surge current 8.3 ms single half sine-wave superimposed on rated load i fsm 125 a operating junction and storage temperature range t j , t stg - 55 to + 175 c
www.vishay.com for technical questions wi thin your region, please contact one of the following: document number: 84648 2 pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com revision: 21-jul-09 esh3b, esh3c & esh3d vishay general semiconductor new product note (1) pulse test: 300 s pulse width, 1 % duty cycle note (1) units mounted on p.c.b. with 12.0 x 12.0 mm land areas note (1) automotive grade ratings and characteristics curves (t a = 25 c unless otherwise noted) fig. 1 - maximum forward current derating curve fig. 2 - maximum non-repetitive peak forward surge current electrical characteristics (t a = 25 c unless otherwise noted) parameter test conditions symbol value unit maximum instantaneous forward voltage (1) i f = 3 a v f 0.90 v maximum dc reverse current at rated dc blocking voltage t a = 25 c t a = 125 c i r 5.0 150 a maximum reverse recovery time i f = 0.5 a, i r = 1 a, i rr = 0.25 a t rr 25 ns typical reverse recovery time i f = 3 a, v r = 30 v, di/dt = 50 a/s, i rr = 10 % i rm t j = 25 c t j = 100 c t rr 40 55 ns typical stored charge i f = 3 a, v r = 30 v, di/dt = 50 a/s, i rr = 10 % i rm t j = 25 c t j = 100 c q rr 25 60 nc typical junction capacitance 4.0 v, 1 mhz c j 70 pf thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol esh3b esh3c esh3d unit typical thermal resistance (1) r ja r jl 50 15 c/w ordering information (example) preferred p/n unit weight (g) preferred package code base quantity delivery mode esh3d-e3/57t 0.211 57t 850 7" diameter plastic tape and reel esh3d-e3/9at 0.211 9at 3500 13" diameter plastic tape and reel esh3dhe3/57t (1) 0.211 57t 850 7" diameter plastic tape and reel esh3dhe3/9at (1) 0.211 9at 3500 13" diameter plastic tape and reel lead temperat u re (c) a v erage for w ard rectified c u rrent (a) 0 25 50 75 100 125 150 175 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 peak for w ard s u rge c u rr ent (a) nu m b er of cycles at 60 hz 125 100 75 50 25 0 1 10 100
document number: 84648 for technical questions within your region, please contact one of the following: www.vishay.com revision: 21-jul-09 pdd-americas@vishay.com , pdd-asia@vishay.com , pdd-europe@vishay.com 3 esh3b, esh3c & esh3d vishay general semiconductor new product fig. 3 - typical instantaneous forward characteristics fig. 4 - typical reverse leakage characteristics fig. 5 - typical junction capacitance fig. 6 - typical transient thermal impedance package outline dimensions in inches (millimeters) 0.2 0.4 0.6 0. 8 1.0 1.2 100 10 1 0.1 0.01 instantaneo u s for w ard v oltage ( v ) t j = 150 c t j = 125 c t j = 175 c t j = 25 c instantaneo u s for w ard c u rrent (a) 0204060 8 0 100 percent of rated peak re v erse v oltage ( % ) 1000 100 10 1 0.1 0.01 t j = 150 c t j = 125 c t j = 175 c t j = 25 c instantaneo u s re v erse leakage c u rrent ( a) re v erse v oltage ( v ) j u nction capacitance (pf) 0.1 1 10 100 1000 100 10 1 100 10 1 0.01 0.1 1 10 100 transient thermal impedance (c/ w ) t - p u lse d u ration (s) cathode band do-214ab (smc) 0.126 (3.20) 0.114 (2.90) 0.246 (6.22) 0.220 (5.59) 0.2 8 0 (7.11) 0.260 (6.60) 0.012 (0.305) 0.006 (0.152) 0.00 8 (0.2) 0 (0) 0.320 ( 8 .13) 0.305 (7.75) 0.060 (1.52) 0.030 (0.76) 0.103 (2.62) 0.079 (2.06) mountin g pad layout 0.126 (3.20) mi n . 0.060 (1.52) mi n . 0.1 8 5 (4.69) max. 0.320 ref.
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